BA

Benoît Amstatt

AL Aledia: 15 patents #6 of 84Top 8%
CEA: 10 patents #375 of 7,956Top 5%
CN CNRS: 2 patents #1,756 of 11,908Top 15%
Overall (All Time): #248,631 of 4,157,543Top 6%
18
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12074191 Optoelectronic device with light-emitting diodes a doped region of which incorporates an external segment based on aluminium and gallium nitride Pierre Tchoulfian 2024-08-27
11894413 Method for producing an optoelectronic device comprising light-emitting diodes which are homogeneous in dimensions Pierre Tchoulfian 2024-02-06
11563147 Optoelectronic device comprising three-dimensional light-emitting diodes Pierre Tchoulfian, Philippe Gilet 2023-01-24
10886427 Optoelectronic device comprising three-dimensional diodes Florian Dupont, Vincent Beix, Thomas Lacave, Philippe Gilet, Ewen Henaff +2 more 2021-01-05
10801129 Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements Florian Dupont, Ewen Henaff, Bérangère Hyot 2020-10-13
10651341 Optoelectronic device and method for manufacturing same Sylvia Scaringella, Jesus Zuniga-Perez 2020-05-12
10636653 Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps Bérangère Hyot, Marie-Francoise Armand, Florian Dupont 2020-04-28
10424692 Optoelectronic device comprising three-dimensional electroluminescent diodes emitting at different wavelengths Sylvia Scaringella, Jesus Zuniga-Perez 2019-09-24
10340138 Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide Florian Dupont, Bérangère Hyot 2019-07-02
10153399 Optoelectronic device comprising semiconductor elements and its fabrication process Erwan Dornel, Philippe Gilet 2018-12-11
10026870 Optoelectronic device having semiconductor elements Nathalie Dechoux, Thomas Lacave, Philippe Gibert 2018-07-17
9991342 Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device Bérangère Hyot, Marie-Francoise Armand, Florian Dupont 2018-06-05
9899566 Optoelectronic device comprising microwires or nanowires 2018-02-20
9728679 Optoelectronic device and method for manufacturing same Nathalie Dechoux, Philippe Gilet 2017-08-08
9698011 Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps Bérangère Hyot, Marie-Francoise Armand 2017-07-04
9679966 Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device Bérangère Hyot, Marie-Francoise Armand 2017-06-13
9559256 Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure Bruno Daudin 2017-01-31
9331242 Optoelectronic device and method for manufacturing same Nathalie Dechoux, Philippe Gilet 2016-05-03