Issued Patents 2025
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12389814 | High electron affinity dielectric layer to improve cycling | Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Cheng-Jun Wu | 2025-08-12 |
| 12356875 | RRAM bottom electrode | Fu-Chen Chang, Kuo-Chi Tu | 2025-07-08 |
| 12336442 | Memory device with bottom electrode | Hsia-Wei Chen, Chih-Hung Pan, Chih-Hsiang Chang, Yu-Wen Liao | 2025-06-17 |
| 12322429 | Embedded ferroelectric memory cell | Tzu-Yu Chen, Kuo-Chi Tu, Yong-Shiuan Tsair | 2025-06-03 |
| 12322441 | Resistive random access memory device | Yu-Der Chih, Chung-Cheng Chou | 2025-06-03 |
| 12256652 | Metal landing on top electrode of RRAM | Chih-Yang Chang | 2025-03-18 |
| 12238939 | Memory device having two memory stacks over one bottom electrode | Chieh-Fei Chiu, Yong-Shiuan Tsair, Yu-Wen Liao, Chin-Yu Mei, Po-Hao Tseng | 2025-02-25 |
| 12232333 | Integrated circuit | Chieh-Fei Chiu, Yong-Shiuan Tsair, Yu-Wen Liao, Chih-Yang Chang, Chin-Chieh Yang | 2025-02-18 |
| 12218005 | Integrated circuit device | Hsia-Wei Chen, Fu-Ting Sung, Yu-Wen Liao, Fa-Shen Jiang, Tzu-Hsuan Yeh | 2025-02-04 |