Partial year: Data through Q3 2025 (Sept 30). Full-year totals not yet available.
JY

Ji-Feng Ying

TSMC: 4 patents #764 of 3,957Top 20%
📍 Hsinchu, CA: #56 of 221 inventorsTop 30%
Overall (2025): #34,785 of 469,880Top 8%
4
Patents 2025

Issued Patents 2025

Showing 1–4 of 4 patents

Patent #TitleCo-InventorsDate
12424255 Crystal seed layer for magnetic random access memory (MRAM) Tsann Lin, Chih-Chung Lai 2025-09-23
12382841 Magnetic device and magnetic random access memory Jhong-Sheng Wang, Tsann Lin 2025-08-05
12302587 Memory device and semiconductor die, and method of fabricating memory device Jhong-Sheng Wang, Tsann Lin 2025-05-13
12300293 Method for writing to magnetic random access memory Jhong-Sheng Wang, Baohua Niu 2025-05-13