Issued Patents 2025
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12354695 | Trench formation scheme for programmable metallization cell to prevent metal redeposit | Fu-Ting Sung, Yuan-Tai Tseng | 2025-07-08 |
| 12302767 | Buffer layer in memory cell to prevent metal redeposition | Chang-Chih Huang, Yuan-Tai Tseng, Kuo-Chyuan Tzeng, Yihuei Zhu | 2025-05-13 |
| 12274182 | Sidewall spacer structure for memory cell | Yao-Wen Chang, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsung-Hsueh Yang, Yuan-Tai Tseng +2 more | 2025-04-08 |