Issued Patents 2025
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12421624 | SiC substrate, SiC epitaxial substrate, SiC ingot and production methods thereof | — | 2025-09-23 |
| 12398038 | Manufacturing method of modified aluminum nitride raw material, modified aluminum nitride raw material, manufacturing method of aluminum nitride crystals, and downfall defect prevention method | Daichi Dojima, Moeko Matsubara, Yoshitaka Nishio | 2025-08-26 |
| 12385158 | Method for manufacturing a semiconductor substrate by forming a growth layer on an underlying substrate having through holes | Daichi Dojima | 2025-08-12 |
| 12362175 | Method for manufacturing SiC substrate | — | 2025-07-15 |
| 12325930 | Manufacturing device for SiC semiconductor substrate | Yasunori Kutsuma, Koji Ashida, Ryo Hashimoto | 2025-06-10 |
| 12325936 | Aluminum nitride substrate manufacturing method, aluminum nitride substrate, and method of removing strain layer introduced into aluminum nitride substrate by laser processing | Daichi Dojima, Moeko Matsubara, Yoshitaka Nishio | 2025-06-10 |
| 12320030 | Method of using sic container | Yasunori Kutsuma, Koji Ashida, Ryo Hashimoto | 2025-06-03 |
| 12255073 | Silicon carbide substrate manufacturing method, silicon carbide substrate, and method of removing strain layer introduced into silicon carbide substrate by laser processing | Daichi Dojima | 2025-03-18 |
| 12247319 | Method for producing a SiC seed crystal for growth of a SiC ingot by heat-treating in a main container made of a SiC material | Kiyoshi Kojima | 2025-03-11 |
| 12237377 | SiC semiconductor substrate, and, production method therefor and production device therefor | Koji Ashida, Tomoya Ihara, Daichi Dojima | 2025-02-25 |
| 12237378 | Method for manufacturing SiC substrate | Masatake Nagaya | 2025-02-25 |
| 12209328 | Method of manufacturing semiconductor substrate and epitaxial growth method | — | 2025-01-28 |