| 12417966 |
IPD components having SiC substrates and devices and processes implementing the same |
Donald Farrell, Marvin Marbell, Jeremy Fisher, Dan Namishia, Dan Etter |
2025-09-16 |
| 12408403 |
Field effect transistor with stacked unit subcell structure |
Kyle Bothe, Jia Guo, Yueying Liu, Jeremy Fisher |
2025-09-02 |
| 12402348 |
Field effect transistor with selective channel layer doping |
Jia Guo, Saptharishi Sriram |
2025-08-26 |
| 12266721 |
Field effect transistor with multiple stepped field plate |
Jia Guo, Kyle Bothe |
2025-04-01 |
| 12224318 |
Radio frequency transistor amplifiers having self-aligned double implanted source/drain regions for improved on-resistance performance and related methods |
Kyle Bothe, Chloe Hawes, Jennifer Gao |
2025-02-11 |
| 12191821 |
Group III nitride-based monolithic microwave integrated circuits having multi-layer metal-insulator-metal capacitors |
Jeremy Fisher, Dan Namishia |
2025-01-07 |