Issued Patents 2025
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12224347 | P-type field effect transistor (PFET) on a silicon germanium (Ge) buffer layer to increase Ge in the PFET source and drain to increase compression of the PFET channel and method of fabrication | Bin Yang, Xia Li | 2025-02-11 |
| 12206001 | FinFET semiconductor device | Bin Yang, Xia Li | 2025-01-21 |