QT

Qian Tao

YC Yangtze Memory Technologies Co.: 7 patents #16 of 314Top 6%
Micron: 1 patents #790 of 1,553Top 55%
📍 Beijing, ID: #3 of 6 inventorsTop 50%
Overall (2024): #13,458 of 561,600Top 3%
8
Patents 2024

Issued Patents 2024

Showing 1–8 of 8 patents

Patent #TitleCo-InventorsDate
12167610 Semiconductor devices including ferroelectric materials Matthew N. Rocklein, Beth R. Cook, D. V. Nirmal Ramaswamy 2024-12-10
12137558 Staircase structure for memory device Zhenyu Lu, Jun Chen, Xiaowang Dai, Jifeng Zhu, Yu Ru Huang +6 more 2024-11-05
12063780 Memory cell structure of a three-dimensional memory device Xiaowang Dai, Zhenyu Lu, Jun Chen, Yushi Hu, Jifeng Zhu +4 more 2024-08-13
12010838 Staircase structure for memory device Zhenyu Lu, Jun Chen, Xiaowang Dai, Jifeng Zhu, Yu Ru Huang +6 more 2024-06-11
11991880 Three-dimensional memory devices and fabricating methods thereof Zhenyu Lu, Yu Ru Huang, Yushi Hu, Jun Chen, Xiaowang Dai +3 more 2024-05-21
11968832 Multiple-stack three-dimensional memory device and fabrication method thereof Jun Liu, Zongliang Huo, Li Xiao, Zhenyu Lu, Yushi Hu +4 more 2024-04-23
11943928 Method for forming channel hole plug of three-dimensional memory device Li Xiao, Zhenyu Lu, Yushi Hu, Jun Chen, Longdong Liu +1 more 2024-03-26
11889686 Vertical memory devices Miao Shen, Li Xiao, Yushi Hu, Mei Lan Guo, Yong Zhang +1 more 2024-01-30