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FinFET power semiconductor devices |
Naeem Islam, Woongsun Kim, Sei-Hyung Ryu |
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| 12159909 |
Power semiconductor device with reduced strain |
Edward Robert Van Brunt, Thomas E. Harrington, III, Shadi Sabri, Brett Hull, Brice McPherson +1 more |
2024-12-03 |
| 12094926 |
Sidewall dopant shielding methods and approaches for trenched semiconductor device structures |
Naeem Islam, Woongsun Kim, Sei-Hyung Ryu |
2024-09-17 |
| 12094876 |
Conduction enhancement layers for electrical contact regions in power devices |
Woongsun Kim |
2024-09-17 |
| 12087854 |
Vertical semiconductor device with improved ruggedness |
Sei-Hyung Ryu, Kijeong Han, Edward Robert Van Brunt |
2024-09-10 |
| 12080790 |
Power semiconductor devices including angled gate trenches |
Woongsun Kim, Sei-Hyung Ryu, Naeem Islam |
2024-09-03 |
| 12057389 |
Transistor semiconductor die with increased active area |
Edward Robert Van Brunt |
2024-08-06 |
| 12009389 |
Edge termination for power semiconductor devices and related fabrication methods |
Woongsun Kim, Sei-Hyung Ryu, Naeem Islam |
2024-06-11 |
| 11990543 |
Power transistor with soft recovery body diode |
Kijeong Han, Sei-Hyung Ryu |
2024-05-21 |
| RE49913 |
Vertical power transistor device |
Vipindas Pala, Anant Agarwal, Lin Cheng, John Williams Palmour |
2024-04-09 |
| 11929420 |
Power semiconductor devices having multilayer gate dielectric layers that include an etch stop/field control layer and methods of forming such devices |
— |
2024-03-12 |
| 11894455 |
Vertical power devices fabricated using implanted methods |
Sei-Hyung Ryu, Arman Ur Rashid |
2024-02-06 |
| 11869948 |
Power semiconductor device with reduced strain |
Edward Robert Van Brunt, Thomas E. Harrington, III, Shadi Sabri, Brett Hull, Brice McPherson +1 more |
2024-01-09 |