JZ

Jiayun Zhang

CT Changxin Memory Technologies: 1 patents #216 of 490Top 45%
📍 Hefei, CA: #31 of 46 inventorsTop 70%
Overall (2024): #153,150 of 561,600Top 30%
2
Patents 2024

Issued Patents 2024

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
12147713 High-bandwidth DDR DIMM, memory system, and operation method thereof Liang Zhang, Jiechen Shou, Chuanhao Xu, Ming Huang 2024-11-19
11956941 Manufacturing method for memory 2024-04-09