PV

Pietro Valcozzena

GC Globalwafers Co.: 2 patents #26 of 99Top 30%
📍 Piasent, IT: #1 of 2 inventorsTop 50%
Overall (2024): #127,114 of 561,600Top 25%
2
Patents 2024

Issued Patents 2024

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
11987900 Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer Maria Porrini, Januscia Duchini 2024-05-21
11987901 Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer Maria Porrini, Januscia Duchini 2024-05-21