| 11823761 |
Pre-read in opposite polarity to evaluate read margin |
Zhongyuan Lu |
2023-11-21 |
| 11823745 |
Predicting and compensating for degradation of memory cells |
Zhongyuan Lu |
2023-11-21 |
| 11735258 |
Increase of a sense current in memory |
Zhongyuan Lu, Karthik Sarpatwari |
2023-08-22 |
| 11710517 |
Write operation techniques for memory systems |
Zhongyuan Lu, Christina Papagianni, Hongmei Wang |
2023-07-25 |
| 11711987 |
Memory electrodes and formation thereof |
Joseph M. McCrate |
2023-07-25 |
| 11705195 |
Increase of a sense current in memory |
Zhongyuan Lu |
2023-07-18 |
| 11651825 |
Random value generator |
Zhongyuan Lu, Hongmei Wang |
2023-05-16 |
| 11605418 |
Memory device architecture using multiple physical cells per bit to improve read margin and to alleviate the need for managing demarcation read voltages |
Joseph M. McCrate, Hari Giduturi, Ramin Ghodsi |
2023-03-14 |
| 11568932 |
Read cache for reset read disturb mitigation |
Zhongyuan Lu, Stephen H. Tang |
2023-01-31 |
