| 11763895 |
Power architecture for non-volatile memory |
Qisong Lin, Shuai Xu, Jonathan S. Parry, Jeremy Binfet, Qing Liang |
2023-09-19 |
| 11763858 |
Peak current reduction using dynamic clocking during charge pump recovery period |
Vivek Venkata Kalluru |
2023-09-19 |
| 11710533 |
NAND flash array defect real time detection |
Xiaojiang Guo, Jung Sheng Hoei, Manan Tripathi |
2023-07-25 |
| 11704047 |
Temperature readings for memory devices to reduce temperature compensation errors |
Agostino Macerola, Umberto Siciliani, Tommaso Vali, Enrico Favaro |
2023-07-18 |
| 11688468 |
Standby biasing techniques to reduce read disturbs |
Xiaojiang Guo, Shigekazu Yamada |
2023-06-27 |
| 11670346 |
Memory cell programming including applying programming pulses of different pulse widths to different access lines |
Chang Hua Siau, Qui Vi Nguyen |
2023-06-06 |
| 11652409 |
Stage protection in multi-stage charge pumps |
Xiaojiang Guo |
2023-05-16 |
| 11631319 |
Resistor-capacitor sensor circuit |
Pin-Chou Chiang, Theodore T. Pekny |
2023-04-18 |
| 11615853 |
Selective overdrive of supply voltage to primary switch for programming memory cells |
— |
2023-03-28 |
| 11573588 |
Low-voltage bias generator based on high-voltage supply |
Xiaojiang Guo |
2023-02-07 |
