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Semiconductor device |
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2022-12-27 |
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High electron mobility transistor with trench isolation structure capable of applying stress and method of manufacturing the same |
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Semiconductor structure with nano-twinned metal coating layer and fabrication method thereof |
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2022-11-22 |
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Method for manufacturing high electron mobility transistor with at least two barrier layers |
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High electron mobility transistor with trench isolation structure capable of applying stress |
— |
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| 11444196 |
Method for fabricating semiconductor device with asymmetric strained source/drain structure |
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Method for fabricating semiconductor device with asymmetric strained source/drain structure |
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Resistive memory device and manufacturing method thereof |
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| 11355494 |
Semiconductor device |
Yu-Wen Hung |
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Method for forming transistor with strained channel |
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Vibration isolation apparatus for server rack delivery |
Chao-Jung Chen, Ming-Sheng Chang, Sheng-Wei Tang |
2022-03-15 |