Issued Patents 2022
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11482613 | Hybrid active-field gap extended drain MOS transistor | John Lin | 2022-10-25 |
| 11456381 | Drain-extended transistor | Meng-Chia Lee, Sunglyong Kim, Seetharaman Sridhar | 2022-09-27 |
| 11355597 | Transistor with source field plates and non-overlapping gate runner layers | Hiroyuki Tomomatsu, Hiroshi Yamasaki | 2022-06-07 |
| 11322610 | High voltage lateral junction diode device | Sunglyong Kim, Seetharaman Sridhar | 2022-05-03 |
| 11239318 | High-voltage drain expended MOS transistor | Sunglyong Kim, Seetharaman Sridhar | 2022-02-01 |