Issued Patents 2022
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532785 | Buffer layer in memory cell to prevent metal redeposition | Chung-Chiang Min, Chang-Chih Huang, Kuo-Chyuan Tzeng, Yihuei Zhu | 2022-12-20 |
| 11532697 | Semiconductor structure and method for forming the same | Yi Jen Tsai, Chern-Yow Hsu | 2022-12-20 |
| 11430956 | RRAM cell structure with conductive etch-stop layer | Ming Chyi Liu, Chern-Yow Hsu, Shih-Chang Liu, Chia-Shiung Tsai | 2022-08-30 |
| 11362265 | Semiconductor structure and method of manufacturing the same | Fu-Ting Sung, Chung-Chiang Min, Chern-Yow Hsu, Shih-Chang Liu | 2022-06-14 |
| 11342379 | Trench formation scheme for programmable metallization cell to prevent metal redeposit | Fu-Ting Sung, Chung-Chiang Min | 2022-05-24 |
| 11289648 | Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls | Shih-Chang Liu | 2022-03-29 |
| 11289651 | Memory device having via landing protection | Tsung-Hsueh Yang, Shih-Chang Liu | 2022-03-29 |