Issued Patents 2022
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11515419 | Ferroelectric semiconductor device and method of manufacturing the same | — | 2022-11-29 |
| 11508846 | Ferroelectric memory device | — | 2022-11-22 |
| 11502248 | Ferroelectric components and cross point array devices including the ferroelectric components | Jae Gil LEE, Jae Hyun Han | 2022-11-15 |
| 11488979 | Semiconductor device of three-dimensional structure including ferroelectric layer | Jae Gil LEE, Kun Young LEE | 2022-11-01 |
| 11482667 | Nonvolatile memory device having a resistance change layer and a plurality of electrode pattern layers | Jae Hyun Han, Se-Ho Lee | 2022-10-25 |
| 11469272 | Nonvolatile memory device having resistance change memory layer | Jae Hyun Han, Se-Ho Lee | 2022-10-11 |
| 11456318 | Nonvolatile memory device having a ferroelectric layer | Jae Hyun Han, Jae Gil LEE, Se-Ho Lee | 2022-09-27 |
| 11430812 | Nonvolatile memory device including ferroelectric layer having negative capacitance | Jae Gil LEE, Se-Ho Lee | 2022-08-30 |
| 11424269 | Method of fabricating vertical memory device | Jae Gil LEE, Ju Ry Song, Se-Ho Lee | 2022-08-23 |
| 11393846 | Ferroelectric memory device having ferroelectric induction layer and method of manufacturing the same | Seho Lee, Jae Gil LEE | 2022-07-19 |
| 11362143 | Nonvolatile memory device having three-dimensional structure | Jae Hyun Han, Se-Ho Lee | 2022-06-14 |
| 11362107 | Nonvolatile memory device having a ferroelectric layer | Jae Hyun Han, Se-Ho Lee, Jae Gil LEE | 2022-06-14 |
| 11309354 | Three-dimensional nonvolatile memory device having resistance change structure and method of operating the same | Jae Hyun Han, Se-Ho Lee | 2022-04-19 |
| 11244959 | Semiconductor device having ferroelectric material and method of fabricating the same | Jae Gil LEE, Se-Ho Lee | 2022-02-08 |