Issued Patents 2022
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538532 | Architectures for storing and retrieving system data in a non-volatile memory system | Chunming Wang, Nhan Do, Hieu Van Tran | 2022-12-27 |
| 11508442 | Non-volatile memory system using strap cells in source line pull down circuits | Leo Xing, Chunming Wang, Nhan Do, Guangming Lin, Yaohua Zhu | 2022-11-22 |
| 11444091 | Method of making memory cells, high voltage devices and logic devices on a substrate | Jack Sun, Chunming Wang, Andy Yang, Guo Xiang Song, Leo Xing +1 more | 2022-09-13 |
| 11404545 | Method of forming split-gate flash memory cell with spacer defined floating gate and discretely formed polysilicon gates | Chunming Wang, Nhan Do, Leo Xing, Guo Yong Liu, Melvin Diao | 2022-08-02 |
| 11362100 | FinFET split gate non-volatile memory cells with enhanced floating gate to floating gate capacitive coupling | Feng Zhou, Steven Lemke, Hieu Van Tran, Nhan Do | 2022-06-14 |
| 11322507 | Method of making memory cells, high voltage devices and logic devices on a substrate with silicide on conductive blocks | Chunming Wang, Jack Sun, Leo Xing, Nhan Do, Andy Yang +1 more | 2022-05-03 |
| 11315635 | Split-gate, 2-bit non-volatile memory cell with erase gate disposed over word line gate, and method of making same | Chunming Wang, Guo Xiang Song, Leo Xing, Nhan Do | 2022-04-26 |
| 11316024 | Split-gate non-volatile memory cells with erase gates disposed over word line gates, and method of making same | Chunming Wang, Guo Xiang Song, Leo Xing, Nhan Do | 2022-04-26 |
| 11315940 | Method of forming a device with planar split gate non-volatile memory cells, high voltage devices and FinFET logic devices | Chunming Wang, Guo Xiang Song, Leo Xing, Jack Sun, Nhan Do | 2022-04-26 |