| 11515198 |
Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions |
Gurtej S. Sandhu, Scott L. Light, Sony Varghese |
2022-11-29 |
| 11476251 |
Channel integration in a three-node access device for vertical three dimensional (3D) memory |
Scott E. Sills, Si-Woo Lee, Gurtej S. Sandhu, Armin Saeedi Vahdat |
2022-10-18 |
| 11417565 |
Methods of forming high aspect ratio openings and methods of forming high aspect ratio features |
Ken Tokashiki, Gurtej S. Sandhu |
2022-08-16 |
| 11411008 |
Integrated circuity, dram circuitry, methods used in forming integrated circuitry, and methods used in forming DRAM circuitry |
Gurtej S. Sandhu |
2022-08-09 |
| 11329051 |
Gate dielectric repair on three-node access device formation for vertical three-dimensional (3D) memory |
Gurtej S. Sandhu, Armin Saeedi Vahdat, Si-Woo Lee, Scott E. Sills |
2022-05-10 |
| 11289491 |
Epitaxtal single crystalline silicon growth for a horizontal access device |
Armin Saeedi Vahdat, Gurtej S. Sandhu, Scott E. Sills, Si-Woo Lee |
2022-03-29 |
| 11270909 |
Apparatus with species on or in conductive material on elongate lines |
Gurtej S. Sandhu, Marko Milojevic, Timothy A. Quick, Sumeet C. Pandey |
2022-03-08 |
| 11239117 |
Replacement gate dielectric in three-node access device formation for vertical three dimensional (3D) memory |
Armin Saeedi Vahdat, Si-Woo Lee, Gurtej S. Sandhu, Scott E. Sills |
2022-02-01 |
| 11227864 |
Storage node after three-node access device formation for vertical three dimensional (3D) memory |
Armin Saeedi Vahdat, Si-Woo Lee, Gurtej S. Sandhu, Scott E. Sills |
2022-01-18 |
