TI

Takeshi Ishiguro

IL Icemos Technology Limited: 2 patents #1 of 3Top 35%
📍 Fukushima, CA: #1 of 2 inventorsTop 50%
Overall (2022): #106,453 of 548,613Top 20%
2
Patents 2022

Issued Patents 2022

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
11362042 Semiconductor device with oxide-nitride stack Kiraneswar Muthuseenu, Samuel J. Anderson 2022-06-14
11362179 Radiation hardened high voltage superjunction MOSFET Kiraneswar Muthuseenu, Samuel J. Anderson 2022-06-14