Issued Patents 2022
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11527708 | Ultra-fast magnetic random access memory having a composite SOT-MTJ structure | Rongfu Xiao, Jun Chen | 2022-12-13 |
| 11450466 | Composite seed structure to improve PMA for perpendicular magnetic pinning | Rongfu Xiao, Jun Chen | 2022-09-20 |
| 11450467 | Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy and method of making the same | Rongfu Xiao, Jun Chen | 2022-09-20 |
| 11444239 | Magnetoresistive element having an adjacent-bias layer and a toggle writing scheme | Rongfu Xiao, Jun Chen | 2022-09-13 |
| 11316102 | Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning | Rongfu Xiao, Jun Chen | 2022-04-26 |
| 11271034 | Method of manufacturing magnetic memory devices | — | 2022-03-08 |
| 11257862 | MRAM having spin hall effect writing and method of making the same | — | 2022-02-22 |
| 11251367 | Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning | Rongfu Xiao, Jun Chen | 2022-02-15 |