Issued Patents 2022
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532745 | Integrated circuit structure including asymmetric, recessed source and drain region and method for forming same | Wenjun Li | 2022-12-20 |
| 11410998 | LDMOS finFET structure with buried insulator layer and method for forming same | Wenjun Li | 2022-08-09 |
| 11374002 | Transistors with hybrid source/drain regions | Wenjun Li | 2022-06-28 |
| 11289474 | Passive devices over polycrystalline semiconductor fins | Wang Zheng, Teng-Yin Lin, Halting Wang, Tung-Hsing Lee | 2022-03-29 |
| 11239366 | Transistors with an asymmetrical source and drain | Wenjun Li, Baofu Zhu | 2022-02-01 |
| 11234067 | Headphone structure | Chao-Hui Liang | 2022-01-25 |