Issued Patents 2022
Showing 1–25 of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11515314 | One transistor two capacitors nonvolatile memory cell | Xinshu Cai, Lanxiang Wang, Yongshun Sun, Shyue Seng Tan | 2022-11-29 |
| 11513175 | Tunnel magnetoresistance sensor devices and methods of forming the same | Ping Zheng, Kazutaka Yamane, Shyue Seng Tan, Kiok Boone Elgin Quek | 2022-11-29 |
| 11502250 | Memory devices and methods of forming memory devices | Desmond Jia Jun Loy, Shyue Seng Tan | 2022-11-15 |
| 11502127 | Semiconductor memory devices | Shyue Seng Tan, Xinshu Cai | 2022-11-15 |
| 11500041 | Hall effect sensors | Yongshun Sun, Ping Zheng | 2022-11-15 |
| 11495608 | Multi-finger gate nonvolatile memory cell | Lanxiang Wang, Shyue Seng Tan, Xinshu Cai, Yongshun Sun | 2022-11-08 |
| 11476303 | Multi-level cell configurations for non-volatile memory elements in a bitcell | Desmond Jia Jun Loy, Shyue Seng Tan | 2022-10-18 |
| 11462552 | Semiconductor devices with memory cells | Desmond Jia Jun Loy, Wei Chang, Shyue Seng Tan | 2022-10-04 |
| 11450677 | Partially silicided nonvolatile memory devices and integration schemes | Lanxiang Wang, Shyue Seng Tan, Xinshu Cai, Yongshun Sun | 2022-09-20 |
| 11444125 | Memory devices and methods of forming memory devices | Desmond Jia Jun Loy, Shyue Seng Tan | 2022-09-13 |
| 11437392 | Compact memory cell with a shared conductive select gate and methods of making such a memory cell | Yongshun Sun, Shyue Seng Tan, Kiok Boone Elgin Quek | 2022-09-06 |
| 11404549 | Split gate flash memory cells with a trench-formed select gate | Xinshu Cai, Shyue Seng Tan, Kiok Boone Elgin Quek | 2022-08-02 |
| 11398525 | Resistive memory elements having conductive islands embedded within the switching layer | Desmond Jia Jun Loy, Shyue Seng Tan | 2022-07-26 |
| 11393979 | Non-volatile memory elements with filament confinement | Desmond Jia Jun Loy, Bin Liu, Shyue Seng Tan | 2022-07-19 |
| 11380703 | Memory structures and methods of forming memory structures | Xinshu Cai, Yongshun Sun, Lanxiang Wang, Shyue Seng Tan | 2022-07-05 |
| 11374135 | Sensor and method of forming the same | Lanxiang Wang, Shyue Seng Tan | 2022-06-28 |
| 11372061 | Hall effect sensor devices and methods of forming hall effect sensor devices | Yongshun Sun, Ping Zheng | 2022-06-28 |
| 11355599 | Devices with lower resistance and improved breakdown and method for producing the same | Shyue Seng Tan, Elgin Quek | 2022-06-07 |
| 11349071 | Memory device and a method for forming the memory device | Desmond Jia Jun Loy, Shyue Seng Tan, Steven R. Soss | 2022-05-31 |
| 11335852 | Resistive random access memory devices | Desmond Jia Jun Loy, Shyue Seng Tan | 2022-05-17 |
| 11327045 | Sensor device for detecting a pH change in a solution and a method for forming the sensor device | Lanxiang Wang, Ping Zheng, Shyue Seng Tan | 2022-05-10 |
| 11320417 | Nanogap sensors and methods of forming the same | Xinshu Cai, Shyue Seng Tan, Kiok Boone Elgin Quek | 2022-05-03 |
| 11313827 | Sensor devices for detecting a pH change in a solution | Lanxiang Wang, Bin Liu, Shyue Seng Tan, Kiok Boone Elgin Quek | 2022-04-26 |
| 11309324 | Compact memory cell with a shared conductive word line and methods of making such a memory cell | Yongshun Sun, Shyue Seng Tan, Kiok Boone Elgin Quek | 2022-04-19 |
| 11302702 | Non-volatile memory elements with one-time or multiple-time programmability | Desmond Jia Jun Loy, Sriram Balasubramanian, Shyue Seng Tan | 2022-04-12 |