Issued Patents 2022
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11508581 | Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and helium | Souichi Yoshida | 2022-11-22 |
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11508581 | Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and helium | Souichi Yoshida | 2022-11-22 |