FH

Fu-Yuan Hsieh

NC Nami Mos Co.: 5 patents #1 of 1Top 100%
📍 New Taipei, TW: #92 of 1,914 inventorsTop 5%
Overall (2022): #32,615 of 548,613Top 6%
5
Patents 2022

Issued Patents 2022

Showing 1–5 of 5 patents

Patent #TitleCo-InventorsDate
11515303 Shielded gate trench MOSFET with ESD diode manufactured using two poly-silicon layers process 2022-11-29
11462638 SiC super junction trench MOSFET 2022-10-04
11444164 Shielded gate trench MOSFET having improved specific on-resistance structures 2022-09-13
11380787 Shielded gate trench MOSFET integrated with super barrier rectifier having short channel 2022-07-05
11329155 Trench MOSFETs integrated with clamped diodes having trench field plate termination to avoid breakdown voltage degradation 2022-05-10