Issued Patents 2022
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11527573 | GaN-based threshold switching device and memory diode | Kai Fu, Houqiang Fu | 2022-12-13 |
| 11495694 | GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD) | Chen-Chi Yang, Houqiang Fu, Xuanqi Huang, Kai Fu | 2022-11-08 |
| 11417529 | Plasma-based edge terminations for gallium nitride power devices | Houqiang Fu, Kai Fu | 2022-08-16 |