Issued Patents 2021
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11171137 | Method of making FinFET CMOS device including single diffusion break in each of NMOS and PMOS regions | Yen-Wei Tung, Jen-Yu Wang, Yan-Jou Chen | 2021-11-09 |
| 11018185 | Layout pattern for magnetoresistive random access memory | Yi-Ting Wu, Jian-Jhong Chen, Po-Chun Yang, Jhen-Siang Wu, Yung-Ching Hsieh +2 more | 2021-05-25 |
| 10978122 | Memory including non-volatile cells and current driving circuit | Chun-Yen Tseng, Yu-Tse Kuo, Chang-Hung Chen, Shu-Ru Wang, Ya-Lan Chiou +10 more | 2021-04-13 |