Issued Patents 2021
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11200933 | Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing same | Shunsuke Fukami, Chaoliang Zhang, Ayato Ohkawara, Kyota WATANABE, Hideo Ohno | 2021-12-14 |
| 11183228 | Memory circuit device including a selection circuit unit shared by a write circuit unit and a read circut unit | Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno | 2021-11-23 |
| 11152468 | Semiconductor device | Kunihiro Tsubomi, Masakazu Muraguchi | 2021-10-19 |
| 11133046 | Data writing device for variable-resistance memory element and non-volatile flip-flop | Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno | 2021-09-28 |
| 11081641 | Magnetoresistance effect element, magnetic memory, and method for manufacturing magnetoresistance effect element | Hiroaki Honjo, Shoji Ikeda, Hideo Sato, Hideo Ohno | 2021-08-03 |
| 11062876 | Evaluation method and evaluation apparatus for electronic device | Masaaki Niwa, Shoji Ikeda, Kosuke Kimura | 2021-07-13 |
| 11054463 | Method and system for measuring thermal stability factor of magnetic tunnel junction device, semiconductor integrated circuit, and production management method for semiconductor integrated circuit | Kenchi Ito, Hideo Sato, Takashi Saito, Masakazu Muraguchi, Hideo Ohno | 2021-07-06 |
| 10998491 | Magnetoresistive element and magnetic memory | Kyota WATANABE, Shunsuke Fukami, Hideo Sato, Hideo Ohno | 2021-05-04 |
| 10957371 | Memory device that enables direct block copying between cell configurations in different operation modes | Yasuhiro Ohtomo | 2021-03-23 |
| 10896729 | Data write circuit of resistive memory element | Takahiro Hanyu, Daisuke Suzuki, Hideo Ohno | 2021-01-19 |
| 10897230 | Bias circuit and amplification apparatus | Satoru Tanoi | 2021-01-19 |