| 11189721 |
Trench gate trench field plate vertical MOSFET |
Marie Denison, Guru Mathur |
2021-11-30 |
| 11177378 |
HEMT having conduction barrier between drain fingertip and source |
Jungwoo Joh, Naveen Tipirneni, Chang Soo Suh |
2021-11-16 |
| 11158750 |
Superlattice photo detector |
He Lin |
2021-10-26 |
| 11152459 |
Lateral MOSFET with buried drain extension layer |
Marie Denison, Philip L. Hower |
2021-10-19 |
| 11067620 |
HEMT wafer probe current collapse screening |
Dong Seup Lee, Jungwoo Joh, Pinghai Hao |
2021-07-20 |
| 11049960 |
Gallium nitride (GaN) based transistor with multiple p-GaN blocks |
Chang Soo Suh, Naveen Tipirneni, Jungwoo Joh |
2021-06-29 |
| 11004971 |
LDMOS transistor with gate structure having alternating regions of wider and narrower spacing to a body region |
Ming-Yeh Chuang |
2021-05-11 |
| 10964803 |
Gallium nitride transistor with a doped region |
Dong Seup Lee, Jungwoo Joh, Pinghai Hao |
2021-03-30 |
| 10957774 |
Laterally diffused metal oxide semiconductor with gate poly contact within source window |
Guru Mathur |
2021-03-23 |
| 10950720 |
Electrostatic discharge guard ring with complementary drain extended devices |
Sunglyong Kim, Seetharaman Sridhar, David LaFonteese |
2021-03-16 |
| 10937905 |
Transistor having double isolation with one floating isolation |
Yongxi Zhang, Philip L. Hower, John Lin, Guru Mathur, Scott Balster +1 more |
2021-03-02 |
| 10903320 |
Transistor with source field plates and non-overlapping gate runner layers |
Hiroyuki Tomomatsu, Hiroshi Yamasaki |
2021-01-26 |
| 10903306 |
Integrated trench capacitor |
Binghua Hu, Hideaki Kawahara |
2021-01-26 |
| 10896904 |
ESD guard ring with snapback protection and lateral buried layers |
Sunglyong Kim, David LaFonteese, Seetharaman Sridhar |
2021-01-19 |