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Semiconductor device with deep trench isolation and trench capacitor |
Binghua Hu, Abbas Ali, Yanbiao Pan, Stefan Herzer |
2021-12-07 |
| 11152505 |
Drain extended transistor |
Andrew Strachan, Henry Litzmann Edwards, Dhanoop Varghese, Xiaoju Wu, Binghua Hu +1 more |
2021-10-19 |
| 11094806 |
Fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region |
Natalia Lavrovskaya |
2021-08-17 |
| 11081558 |
LDMOS with high-k drain STI dielectric |
Umamaheswari Aghoram, Pushpa Mahalingam, Eugene C. Davis |
2021-08-03 |
| 11049967 |
DMOS transistor having thick gate oxide and STI and method of fabricating |
Natalia Lavrovskaya |
2021-06-29 |
| 11024649 |
Integrated circuit with resurf region biasing under buried insulator layers |
Jeffrey A. Babcock |
2021-06-01 |
| 10978559 |
MOS transistor with folded channel and folded drift region |
Sheldon Douglas Haynie |
2021-04-13 |
| 10886160 |
Sinker to buried layer connection region for narrow deep trenches |
Binghua Hu, Scott Montgomery |
2021-01-05 |