Issued Patents 2021
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11205493 | Controlling word line voltages to reduce read disturb in a memory device | Henry Chin, Jiahui Yuan | 2021-12-21 |
| 11139018 | Memory device with temporary kickdown of source voltage before sensing | Ohwon Kwon, Jiahui Yuan | 2021-10-05 |
| 10991689 | Additional spacer for self-aligned contact for only high voltage FinFETs | Christopher D. Sheraw, Sangameshwar Rao Saudari, Wei Ma, Kai Zhao, Bala Haran | 2021-04-27 |