Issued Patents 2021
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11211402 | Three-dimensional semiconductor memory device | Seo-Goo Kang, Younghwan Son, Kwonsoon Jo | 2021-12-28 |
| 11158651 | Vertical memory devices | Kyunghwan Lee, Kwangsoo Kim, Taehun Kim, Yongseok Kim | 2021-10-26 |
| 11121151 | Vertical semiconductor devices | Shinhwan Kang, Younghwan Son, Haemin Lee, Jeehoon Han | 2021-09-14 |
| 11114460 | Semiconductor memory devices | Seogoo Kang, Shinhwan Kang | 2021-09-07 |
| 11088163 | Semiconductor devices including upper and lower selectors | Yong Seok Kim, Kyung Hwan Lee, Jun-Hee Lim, Jee Hoon Han | 2021-08-10 |
| 11069709 | Vertical memory devices | — | 2021-07-20 |
| 11056645 | Vertical memory devices | Kyung Hwan Lee, Yong Seok Kim, Jun-Hee Lim | 2021-07-06 |
| 11049847 | Semiconductor device for preventing defects between bit lines and channels | Yongseok Kim, Kyunghwan Lee, Junhee Lim, Jeehoon Han | 2021-06-29 |
| 11024642 | Vertical memory device | Kyung Hwan Lee, Yong Seok Kim, Jun-Hee Lim | 2021-06-01 |
| 11004865 | Memory device | Kwang Soo Kim, Shin-Hwan Kang, Jae-Hoon Jang | 2021-05-11 |
| 10998301 | Semiconductor device | Hyun-Mog Park, Yong Seok Kim, Kyung Hwan Lee, Jun-Hee Lim, Jee Hoon Han | 2021-05-04 |
| 10971238 | Three-dimensional semiconductor memory devices and methods of operating the same | Yongseok Kim, Kyunghwan Lee, Junhee Lim | 2021-04-06 |
| 10896711 | Memory device with memory cell structure including ferroelectric data storage layer, and a first gate and a second gate | Kyung Hwan Lee, Seung Hyun Kim, Yong Seok Kim, Jun-Hee Lim | 2021-01-19 |
| 10896728 | Method of writing data in nonvolatile memory device, with divided subpages or subblocks, and method of erasing data in nonvolatile memory device with divided subpages or subblocks | Chang-Seok Kang, Yong Seok Kim, Kyung Hwan Lee | 2021-01-19 |