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Semiconductor device with at least a portion of gate electrode enclosed by an insulating structure and method of fabricating the same |
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Method of forming an integrated circuit device including a lower electrode on a sidewall of a support column extending vertical on a top surface of a substrate, a dielectric layer surrounding the support column and the lower electrode, and an upper electrode surrounding the dielectric layer |
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Semiconductor memory devices |
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Semiconductor memory device |
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Semiconductor device and method of manufacturing the same |
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Variable resistance memory device |
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Method for fabricating semiconductor device |
Keun-Nam Kim, Yoo-Sang Hwang |
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Semiconductor memory devices |
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Semiconductor device for improving device characteristics |
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2021-01-05 |
