Issued Patents 2021
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10975492 | Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution | Mark P. D'Evelyn, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng | 2021-04-13 |