Issued Patents 2021
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11018155 | Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure | Hongbin Zhu, Gordon A. Haller, Merri L. Carlson, John D. Hopkins, Jia Hui Ng +1 more | 2021-05-25 |