Issued Patents 2021
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11211453 | FinFET with shorter fin height in drain region than source region and related method | Wenjun Li | 2021-12-28 |
| 11101364 | Field-effect transistors with diffusion blocking spacer sections | George R. Mulfinger, Hong Yu, Jianwei Peng, Michael V. Aquilino | 2021-08-24 |
| 10971625 | Epitaxial structures of a semiconductor device having a wide gate pitch | Michael V. Aquilino, Daniel Jaeger, Bradley Morgenfeld, Haiting Wang, KAVYA SREE DUGGIMPUDI +1 more | 2021-04-06 |
| 10964598 | Methods of forming source/drain regions of a FinFET device and the resulting structures | Bingwu Liu, Tao Chu | 2021-03-30 |