| 11211487 |
Transistors, memory structures and memory arrays containing two-dimensional materials between a source/drain region and a channel region |
Chandra Mouli, Haitao Liu |
2021-12-28 |
| 11177265 |
Integrated assemblies having threshold-voltage-inducing-structures proximate gated-channel-regions, and methods of forming integrated assemblies |
Si-Woo Lee, Haitao Liu, Deepak Chandra Pandey |
2021-11-16 |
| 11171206 |
Channel conduction in semiconductor devices |
Haitao Liu, Si-Woo Lee, Fatma Arzum Simsek-Ege, Deepak Chandra Pandey, Chandra Mouli +1 more |
2021-11-09 |
| 11170835 |
Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery |
Chandra Mouli, Durai Vishak Nirmal Ramaswamy, F. Daniel Gealy |
2021-11-09 |
| 11164889 |
Integrated assemblies having ferroelectric transistors with heterostructure active regions |
Durai Vishak Nirmal Ramaswamy, Haitao Liu |
2021-11-02 |
| 11139396 |
Devices including vertical transistors, and related methods |
Durai Vishak Nirmal Ramaswamy, Haitao Liu |
2021-10-05 |
| 11127747 |
Transistors including two-dimensional materials |
Akira Goda, Sanh D. Tang, Gurtej S. Sandhu, Litao Yang, Haitao Liu |
2021-09-21 |
| 11107817 |
Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies |
Yi Fang Lee, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Ramanathan Gandhi, Karthik Sarpatwari +2 more |
2021-08-31 |
| 11043260 |
Single word line gain cell with complementary read write channel |
Haitao Liu, Karthik Sarpatwari, Durai Vishak Nirmal Ramaswamy |
2021-06-22 |
| 11038027 |
Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material |
Deepak Chandra Pandey, Haitao Liu, Richard J. Hill, Guangyu Huang, Yunfei Gao +2 more |
2021-06-15 |
| 11018255 |
Devices and systems with string drivers including high band gap material and methods of formation |
Haitao Liu, Guangyu Huang, Chandra Mouli, Akira Goda, Deepak Chandra Pandey |
2021-05-25 |
| 10998440 |
Device including a vertical transistor having a large band gap channel material and void spaces adjacent gate electrodes, and related methods and systems |
Ramanathan Gandhi, Hong Li, Haitao Liu, Durai Vishak Nirmal Ramaswamy, Sanh D. Tang +1 more |
2021-05-04 |
| 10998338 |
Integrated assemblies having ferroelectric transistors with heterostructure active regions |
Durai Vishak Nirmal Ramaswamy, Haitao Liu |
2021-05-04 |
| 10943915 |
Integrated memory having the body region comprising a different semiconductor composition than the source/drain region |
Albert Fayrushin, Haitao Liu, Kirk D. Prall |
2021-03-09 |
| 10943953 |
Semiconductor devices, hybrid transistors, and related methods |
Haitao Liu, Durai Vishak Nirmal Ramaswamy |
2021-03-09 |
| 10937482 |
Memory cells and arrays of elevationally-extending strings of memory cells |
Ankit Sharma, Haitao Liu, Albert Fayrushin, Akira Goda |
2021-03-02 |
| 10937904 |
Programmable charge-storage transistor, an array of elevationally-extending strings of memory cells, and a method of forming an array of elevationally-extending strings of memory cells |
Haitao Liu, Albert Fayrushin |
2021-03-02 |
| 10903223 |
Driver placement in memories having stacked memory arrays |
Haitao Liu, Gurtej S. Sandhu, Sanh D. Tang, Akira Goda, Lifang Xu |
2021-01-26 |
