Issued Patents 2021
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11101346 | Edge termination designs for semiconductor power devices | Zhiyun Luo, Fei Wang | 2021-08-24 |
| 10998264 | Dual-gate trench IGBT with buried floating P-type shield | Madhur Bobde, Hamza Yilmaz | 2021-05-04 |
| 10950699 | Termination for vertical trench shielded devices | M. Ayman Shibib, Misbah Ul Azam, Kyle Terrill | 2021-03-16 |
| 10923588 | SGT MOSFET with adjustable CRSS and CISS | Zhiyun Luo, Fei Wang, Mengyu Pan | 2021-02-16 |
| 10896959 | Top structure of super junction MOSFETs and methods of fabrication | — | 2021-01-19 |