Issued Patents 2021
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11183573 | III-nitride field-effect transistor with dual gates | — | 2021-11-23 |
| 10943998 | Digital alloy based back barrier for P-channel nitride transistors | Yu Cao | 2021-03-09 |
| 10937650 | Semiconductor device having in situ formed horizontal nanowire structure | Danny Kim, Yu Cao, Thaddeus D. Ladd | 2021-03-02 |
| 10916647 | FET transistor on a III-V material structure with substrate transfer | Zijian Li | 2021-02-09 |
| 10910793 | Low modulation-voltage cryogenic diode structure | Daniel Yap, Andrew Pan | 2021-02-02 |
| 10903333 | Doped gate dielectric materials | Yu Cao, Zijian Li | 2021-01-26 |