Issued Patents 2021
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11111602 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Zheng Lu, Gaurab Samanta, Tse-Wei Lu | 2021-09-07 |
| 10988859 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Zheng Lu, Gaurab Samanta, Tse-Wei Lu | 2021-04-27 |