Issued Patents 2021
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11195947 | Semiconductor device with doped region adjacent isolation structure in extension region | Jagar Singh, Luigi Pantisano, Anvitha Shampur, Frank Scott Johnson | 2021-12-07 |
| 11127818 | High voltage transistor with fin source/drain regions and trench gate structure | Jagar Singh | 2021-09-21 |