Issued Patents 2021
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11177385 | Transistors with a hybrid source or drain | Haiting Wang, Jiehui Shu, Baofu Zhu | 2021-11-16 |
| 11164954 | Gate capping layers of semiconductor devices | Zhiguo Sun, Guoliang Zhu, Xinyuan Dou | 2021-11-02 |
| 11164795 | Transistors with source/drain regions having sections of epitaxial semiconductor material | Judson R. Holt, Haiting Wang, Bangun Indajang | 2021-11-02 |
| 11158633 | Multi-level isolation structure | Haiting Wang, Shesh Mani Pandey, Lixia Lei, Gregory Costrini | 2021-10-26 |
| 11133417 | Transistors with a sectioned epitaxial semiconductor layer | Judson R. Holt, Halting Wang | 2021-09-28 |
| 11127834 | Gate structures | Jiehui Shu, Halting Wang | 2021-09-21 |
| 11114466 | IC products formed on a substrate having localized regions of high resistivity and methods of making such IC products | Jiehui Shu, Haiting Wang | 2021-09-07 |
| 11075298 | LDMOS integrated circuit product | Jiehui Shu, Judson R. Holt, Halting Wang | 2021-07-27 |
| 11075268 | Transistors with separately-formed source and drain | Jiehui Shu, Baofu Zhu, Haiting Wang | 2021-07-27 |
| 11043566 | Semiconductor structures in a wide gate pitch region of semiconductor devices | Jiehui Shu, Judson R. Holt, Haiting Wang | 2021-06-22 |
| 11004748 | Semiconductor devices with wide gate-to-gate spacing | Jiehui Shu, Haiting Wang | 2021-05-11 |
| 10937685 | Diffusion break structures in semiconductor devices | Haiting Wang, Jiehui Shu | 2021-03-02 |