| 11177385 |
Transistors with a hybrid source or drain |
Haiting Wang, Jiehui Shu, Baofu Zhu |
2021-11-16 |
| 11164954 |
Gate capping layers of semiconductor devices |
Zhiguo Sun, Guoliang Zhu, Xinyuan Dou |
2021-11-02 |
| 11164795 |
Transistors with source/drain regions having sections of epitaxial semiconductor material |
Judson R. Holt, Haiting Wang, Bangun Indajang |
2021-11-02 |
| 11158633 |
Multi-level isolation structure |
Haiting Wang, Shesh Mani Pandey, Lixia Lei, Gregory Costrini |
2021-10-26 |
| 11133417 |
Transistors with a sectioned epitaxial semiconductor layer |
Judson R. Holt, Halting Wang |
2021-09-28 |
| 11127834 |
Gate structures |
Jiehui Shu, Halting Wang |
2021-09-21 |
| 11114466 |
IC products formed on a substrate having localized regions of high resistivity and methods of making such IC products |
Jiehui Shu, Haiting Wang |
2021-09-07 |
| 11075298 |
LDMOS integrated circuit product |
Jiehui Shu, Judson R. Holt, Halting Wang |
2021-07-27 |
| 11075268 |
Transistors with separately-formed source and drain |
Jiehui Shu, Baofu Zhu, Haiting Wang |
2021-07-27 |
| 11043566 |
Semiconductor structures in a wide gate pitch region of semiconductor devices |
Jiehui Shu, Judson R. Holt, Haiting Wang |
2021-06-22 |
| 11004748 |
Semiconductor devices with wide gate-to-gate spacing |
Jiehui Shu, Haiting Wang |
2021-05-11 |
| 10937685 |
Diffusion break structures in semiconductor devices |
Haiting Wang, Jiehui Shu |
2021-03-02 |
