FH

Fu-Yuan Hsieh

NC Nami Mos Co.: 4 patents #1 of 1Top 100%
📍 New Taipei, TW: #117 of 1,901 inventorsTop 7%
Overall (2021): #50,314 of 548,734Top 10%
4
Patents 2021

Issued Patents 2021

Showing 1–4 of 4 patents

Patent #TitleCo-InventorsDate
11114558 Shielded gate trench MOSFET integrated with super barrier rectifier 2021-09-07
11018127 Shielded gate trench MOSFET with ESD diode manufactured using two poly-silicon layers process 2021-05-25
11004969 Trench MOSFETs having dummy cells for avalanche capability improvement 2021-05-11
10930774 Shielded gate trench MOSFETs with floating trenched gates and channel stop trenched gates in termination 2021-02-23