Issued Patents 2021
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11069699 | NAND memory cell string having a stacked select gate structure and process for forming same | Ming Sang Kwan, Shenqing Fang, Youseok Suh | 2021-07-20 |
| 11056646 | Memory device having programmable impedance elements with a common conductor formed below bit lines | Mark T. Ramsbey, Venkatesh P. Gopinath, Jeffrey A. Shields, Kuei-Chang Tsai, Chakravarthy Gopalan | 2021-07-06 |