| 10749041 |
Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells man |
Fei Wang, Kunal Shrotri, Jeffery B. Hull, Anish A. Khandekar, Zhixin Xu +3 more |
2020-08-18 |
