JD

Jin Wen Dong

YC Yangtze Memory Technologies Co.: 2 patents #3 of 30Top 10%
📍 Hubei, CN: #30 of 207 inventorsTop 15%
Overall (2019): #159,721 of 560,194Top 30%
2
Patents 2019

Issued Patents 2019

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
10515975 Method for forming dual-deck channel hole structure of three-dimensional memory device Qian Tao, Yushi Hu, Zhenyu Lu, Li Xiao, Jun Chen +4 more 2019-12-24
10497708 Memory structure and forming method thereof He Chen, Jifeng Zhu, Zi Qun Hua, Liang Xiao, Yong Qing Wang 2019-12-03