Issued Patents 2019
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10256090 | Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process | Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Virginia D. Wheeler | 2019-04-09 |
| 10256094 | Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process | Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Virginia D. Wheeler | 2019-04-09 |