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Transistor with source field plates under gate runner layers |
Hiroyuki Tomomatsu, Hiroshi Yamasaki |
2019-12-17 |
| 10504885 |
Electrostatic discharge guard ring with snapback protection |
Sunglyong Kim, David LaFonteese, Seetharaman Sridhar |
2019-12-10 |
| 10468324 |
Integration of heat spreader for beol thermal management |
Archana Venugopal, Marie Denison, Luigi Colombo |
2019-11-05 |
| 10381456 |
Group IIIA-N HEMT with a tunnel diode in the gate stack |
Chang Soo Suh, Dong Seup Lee, Jungwoo Joh, Naveen Tipirneni |
2019-08-13 |
| 10347621 |
Electrostatic discharge guard ring with snapback protection |
Sunglyong Kim, David LaFonteese, Seetharaman Sridhar |
2019-07-09 |
| 10319809 |
Structures to avoid floating resurf layer in high voltage lateral devices |
Yongxi Zhang, Philip L. Hower, John Lin, Guru Mathur, Scott Balster +2 more |
2019-06-11 |
| 10312095 |
Recessed solid state apparatuses |
Dong Seup Lee, Yoshikazu Kondo, Pinghai Hao |
2019-06-04 |
| 10304719 |
Deep trench isolation with tank contact grounding |
Yongxi Zhang, Eugen Pompiliu Mindricelu, Seetharaman Sridhar |
2019-05-28 |
| 10290699 |
Method for forming trench capacitor having two dielectric layers and two polysilicon layers |
Hideaki Kawahara, Binghua Hu |
2019-05-14 |
| 10263085 |
Transistor with source field plates and non-overlapping gate runner layers |
Hiroyuki Tomomatsu, Hiroshi Yamasaki |
2019-04-16 |
| 10211335 |
LDMOS transistor with segmented gate dielectric layer |
Ming-Yeh Chuang |
2019-02-19 |
| 10205001 |
Hybrid active-field gap extended drain MOS transistor |
John Lin |
2019-02-12 |
| 10192799 |
Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices |
Dong Seup Lee, Jungwoo Joh |
2019-01-29 |
| 10186589 |
Transistor with source field plates under gate runner layers |
Hiroyuki Tomomatsu, Hiroshi Yamasaki |
2019-01-22 |