| 10497829 |
Semiconductor material doping |
Maxim S. Shatalov, Remigijua Gaska, Michael Shur, Alexander Dobrinsky |
2019-12-03 |
| 10490713 |
Ultraviolet device encapsulant |
Remigijus Gaska, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur |
2019-11-26 |
| 10490697 |
Epitaxy technique for growing semiconductor compounds |
Rakesh Jain, Wenhong Sun, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +2 more |
2019-11-26 |
| 10460952 |
Stress relieving semiconductor layer |
Maxim S. Shatalov, Wenhong Sun, Rakesh Jain, Michael Shur, Remigijus Gaska |
2019-10-29 |
| 10297460 |
Stress relieving semiconductor layer |
Maxim S. Shatalov, Wenhong Sun, Rakesh Jain, Michael Shur, Remigijus Gaska |
2019-05-21 |
| 10276749 |
Ultraviolet reflective rough adhesive contact |
Remigijus Gaska, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Grigory Simin |
2019-04-30 |
| 10243100 |
Semiconductor layer including compositional inhomogeneities |
Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +1 more |
2019-03-26 |
| 10211048 |
Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds |
Wenhong Sun, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska +1 more |
2019-02-19 |
| 10199537 |
Semiconductor structure with stress-reducing buffer structure |
Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska |
2019-02-05 |
| 10199536 |
Patterned layer design for group III nitride layer growth |
Rakesh Jain, Wenhong Sun, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur +1 more |
2019-02-05 |
| 10199535 |
Semiconductor structure with stress-reducing buffer structure |
Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska |
2019-02-05 |
| 10186632 |
Deep ultraviolet light emitting diode |
Michael Shur, Remigijus Gaska, Alexander Dobrinsky |
2019-01-22 |