TK

Tomoaki Kaneko

KT Kabushiki Kaisha Toshiba: 1 patents #665 of 1,746Top 40%
NS National Institute For Materials Science: 1 patents #19 of 117Top 20%
📍 Tsukuba, JP: #97 of 392 inventorsTop 25%
Overall (2019): #239,601 of 560,194Top 45%
1
Patents 2019

Issued Patents 2019

Showing 1–1 of 1 patents

Patent #TitleCo-InventorsDate
10186596 Silicon carbide (SiC) MOSFET with a silicon oxide layer capable of suppressing deterioration of carrier mobility and variation in threshold voltage Tatsuo Shimizu, Takahisa Ohno, Takahiro Yamasaki, Nobuo Tajima, Jun Nara 2019-01-22